The first 0.85 µm 8×8 bottom-emitting vertical-cavity surface-emitting laser diodes (VCSELs) have been grown on AlGaAs substrates. Their characteristics are the same as those of VCSELs grown on GaAs substrate. The authors have also fabricated 8×8 independently addressable VCSEL arrays which exhibited good lasing characteristics and uniform threshold current density.
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Kohama et al. (1994) studied this question.