430-V 12.4-hboxmOmegacdot hboxcm²Normally off 4H-SiC Lateral JFET

This letter reports the experimental demonstration of the first 4H-SiC normally off high-voltage lateral junction field-effect transistor. The design and fabrication of such a device have been investigated. The fabricated device has a vertical channel length of 1.8$muhboxm$created by tilted aluminum implantation on the sidewalls of deep trenches and a lateral drift-region length of 5$muhboxm$. Normally off operation(V_ GS=hbox0 V)with a blocking voltageV_ brof 430 V has been achieved with a specific on-resistanceR_ onhbox- spof 12.4hboxmOmega cdot hboxcm², which is the lowest specific on-resistance for 4H-SiC lateral power switches reported to date, resulting in aV_ br²/R_ onhbox- spvalue of 15hboxMW/cm². This is among the bestV_ br²/R_ onhbox- spfigure-of-merit reported to date for 4H-SiC lateral high-voltage devices.