700-V 1.0-hboxmOmega cdot hboxcm²Buried Gate SiC-SIT (SiC-BGSIT)

Ultralow on-resistance silicon carbide static induction transistors with buried gate structures (SiC-BGSITs) have been successfully developed through innovative fabrication process. A submicrometer buried p+gate structure was fabricated by the combination of submicrometer trench dry etching and epitaxial growth on a trench structure. The breakdown voltage VBRand specific on-resistance RonSof the fabricated SiC-BGSIT were 700 V at a gate voltage VG=-12V, and 1.0 mOmegamiddotcm2at a current density JD=200A/cm2and VG=2.5V, respectively. This RonSis the lowest on-resistance for ~600 V class power switching devices, including other SiC devices and GaN HEMTs