Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy

We have investigated the activation by post-deposition annealing of Zn and Cd acceptors incorporated in InP during epitaxial growth using metalorganic vapor phase epitaxy. Growth was carried out at 20 mbar and atmospheric pressure for Zn- and Cd-doped samples, respectively, using TMI, PH3, DEZn, and DMCd as sources. Post-epitaxial annealing in a N2 atmosphere at temperatures in the range of 370–470 °C leads to complete activation of the acceptors. This process is strongly temperature dependent and a distinct effect of a GaInAs overlayer was observed. The activation energy is the same for Zn- and Cd-doped samples. It is suggested that the diffusion of vacancies plays a determining role in activating the dopant.