We have measured the pressure dependence of the energy levels of the deep traps E2, E3, and E4 produced by irradiation of GaAs with 1-MeV electrons. All three traps have pressure coefficients which are an appreciable fraction of that of the direct gap, with values relative to the bottom of the conduction band of 8.8, 13.5, and 10.5 meV/kbar, respectively, being obtained. We conclude that the previous identification of the E3 level as being the isolated Ga vacancy is far from certain.
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Wallis et al. (1981) studied this question.
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