Model dielectric functions for AlxGa1−xAs alloys of arbitrary compositions

Many optical models have been used to construct analytic composition-dependent dielectric functions of AlxGa1−xAs alloys. However, these models incorporate various unphysical assumptions to improve their fits to data. Here, we provide the parameters needed to calculate dielectric functions of AlxGa1−xAs for 1.5≤E≤6.0 eV and 0≤x≤1 by means of the parametric model of Johs et al. [Thin Solid Films 313–314, 137 (1998)], which eliminates these problems. A representative example concerning interface analysis is discussed, where it is necessary to construct a dielectric function of an alloy of essentially arbitrary composition.