We present an extended drift-diffusion modelling to study electron transport in semi-insulating n-GaAs Schottky-barrier diodes. The model accounts for hot-carrier dynamics and associated kinetics of electrical active traps. A field-enhanced capture cross-section of the two deepest electron traps, attributed to EL2 and EL3 centres, is found to determine the main characteristics of this device. A detailed description of the profile of the electric field, free charge and other related quantities is provided. The modelling compares well with available experimental results and confirms the suitability of this device to be used as a detector for nuclear radiation.
No takes yet. Share an insight, caveat, or question.
Cola et al. (1997) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: