Characterization of an Mg‐implanted GaN p–i–n diode

An Mg‐implanted p–i–n diode was fabricated and characterized. Mg activation was achieved using the multicycle rapid thermal annealing technique with rapid heating pulses up to 1340 °C. The surface of the implanted GaN after annealing was smooth (0.94 nm RMS roughness) with growth steps evident as characterized by atomic force microscopy. The full width at half‐maximum of the implanted GaN E2 Raman mode approaches that of the as‐grown GaN after the annealing process, indicating that the annealing process is able to reverse most of the implantation damage. The Mg‐implanted p–i–n diode exhibits rectification and a low leakage current of 0.11 μA cm−2 at a bias of −10 V. Under forward bias, light emission was observed from the p–i–n diode. The implantation and activation of Mg in a GaN‐based device, demonstrated for the first time in this research, is a key enabling step for future optoelectronic and power electronic devices. Current–voltage characteristics of the Mg‐implanted p–i–n diode with an inset of the device schematic.