Picosecond photomodulation techniques have been applied to study the kinetics of the $n=1$ free exciton in the layered semiconductor GaSe. We have observed a lack of spectral diffusion within a stochastic inhomogeneous exciton resonance at low temperatures and use this to support arguments for partial exciton localization by layer stacking faults.
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Zhang et al. (1984) studied this question.
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