The very fast dynamics of threshold voltage drift (ΔVth) of GaN-based metal-insulator-semiconductor-HEMTs induced by forward gate bias stress is investigated with a simple oscilloscope based setup. We show that the logarithmic recovery time dependence of ΔVth, previously found for recovery times ranging from 10 ms up to 1 ms, extend even to the μs regime. Further, we observed an accumulation of ΔVthbecause of repetitive stress pulses of 100 ns. Consequences for device operation and reliability are discussed.
No takes yet. Share an insight, caveat, or question.
Lagger et al. (2013) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: