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June 1, 2009Journal of International Crisis and Risk Communication ResearchOpen Access

Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

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Authors

HSHimanshu SaxenaCalifornia Institute of TechnologyRPRobert E. PealeUniversity of Central FloridaWBWalter R. BuchwaldUniversity of Massachusetts Boston

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Saxena et al. (2009) studied this question.

synapsesocial.com/papers/6aa026db83e2eedfeeba52bchttps://doi.org/10.1063/1.3129319
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