Novel Approach to Chemically Amplified Resist Materials for Next Generation of Lithography

Our research takes the perspective of how to establish resist structures for nanolithography, we prepared nanoparticles with sizes ranging from 10 to 30 nm by intramolecular self-crosslinking of methylmethacrylate (MMA), 2-hydroxyethyl methacrylate (HEMA) and tert-butyl methacrylate (t-BMA) terpolymer (MMA:HEMA:t-BMA=50%:20%:30%) in an ultradilute solution. As shown in images of pattern side walls by AFM, the chain entanglement of linear polymers made pattern edges and side walls extremely rough.