Two novel series of electron-beam photoresists possessing high sensitivity and contrast have been developed based on chemical amplification chemistry. The amplification process relies on the electron-beam-induced generation of acids derived from the decomposition of onium salts to catalytically deblock pendant tert -butyl ester groups along the backbone of a photoresist polymer or alternatively similar groups present in dissolution inhibitors.
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Crivello et al. (1996) studied this question.
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