High-resolution x-ray diffraction to determine the self-limiting growth in atomic layer epitaxy of InP and InAs/InP heterostructures

High-resolution x-ray diffraction (HRXRD) can be used to quickly and precisely evaluate the self-limiting growth of atomic layer epitaxy (ALE) of III-V compounds and heterostructures. We have studied atomic layer epitaxy of InP and InAs/InP heterostructures in a conventional low pressure metalorganic vapor phase epitaxy reactor. We used the interference of x-ray wave fields in the grown structures to measure nondestructively the thickness of the deposited film with relatively high precision. A self-limiting growth close to 1 monolayer/cycle has been obtained for InP and InAs with a substrate temperature as low as 350–360 °C. HRXRD and photoluminescence measurements have demonstrated the structural and optical high quality of ALE-grown InP and InAs/InP heterostructures.