A quantitative transient multiwave-mixing theory is developed to analyze recently observed picosecond-laser-amplification effects in silicon. Our calculations and comparison with experimental data show the importance of accounting for side diffractions (even in regions of large phase mismatches) and the temporally vastly changing self- and mutual-phase-modulations, besides other physical, material, and optical parameters.
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Khoo et al. (1990) studied this question.
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