Systematic Optimisation of Process Parameters in Laser Drilling of 200 µm Photovoltaic Silicon Wafers Using New Kind of Nanosecond IR Lasers

In this paper we demonstrate high-speed laser drilling of 50 µm through-vias into 200 µm thick monocrystalline silicon wafers for PV cells.This is required as process step for MWT cell technology.We show systematic optimisation of IR laser parameters with some 100 ns pulse duration for this task.We reach drilling speed of 1.9-2.5 ms per hole with 15-20 laser shots, which matches to the tact rate of 1-2 s (100 holes).