Surface silicon nitride layers have been formed on Si(100) crystals via high dose implantation of 1 keV N+ and 2 keV N+2 ions in ultrahigh vacuum. Auger electron spectroscopy depth profiles and Rutherford backscattering measurements indicate the formation of a relatively uniform layer having a composition near Si3N4 to a depth of approximately 70 Å. The current-voltage characteristics of such implanted layers are inferior to those of standard Si3N4 layers.
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Thomas et al. (1982) studied this question.
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