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Thermally stimulated exoelectron emission (TSEE), thermally stimulated luminescence (TSL), and electron spin resonance (ESR) measurements have been performed on MgO single crystals. Ultraviolet light excitation has produced VOH and VAI hole-type centers while spectral distribution, optical bleaching, and ESR annealing studies strongly suggest the presence of an additional “deeper” hole trap. The presence of these three hole-type centers and the reasonable agreement between the peak temperatures of the TSEE and the TSL imply that holes thermally released from the VOH, VAI and the “deeper” center initiate both the electron emission and luminescence near 310, 375 and500 °K, respectively. The TSEE is discussed in terms of a hole-release Auger mechanism.
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Mollenkopf et al. (1973) studied this question.
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