The utility of silicon carbide (SiC) for high temperature structural application has been limited by its brittleness. To improve its ductility, it is paramount to develop a sound understanding of the mechanisms controlling crack propagation. In this manuscript, we present direct ab initio predictions of fracture in SiC under pure mode I and mixed mode loading, utilizing a Kohn–Sham Density Functional Theory (KSDFT) framework. Our results show that in both loading cases, cleavage occurs at a stress intensity factor (SIF) only slightly higher than the Griffith toughness, focusing on a (1 1 1) crack in the 3C-SiC crystal structure. This lattice trapping effect is shown to decrease with mode mixity, due to the formation of a temporary surface bond that forms during decohesion under shear. Comparing the critical mode I SIF to the value obtained in experiments suggests that some plasticity may occur near a crack tip in SiC even at low temperatures. Ultimately, these findings provide a solid foundation upon which to study the influence of impurities on brittleness, and upon which to develop empirical potentials capable of realistically simulating fracture in SiC.
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Leung et al. (2016) studied this question.
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