Electron-beam-induced patterned deposition of allylcyclopentadienyl palladium using scanning tunneling microscopy

Scanning tunneling microscopy has been used to study the electron-induced decomposition of allylcyclopentadienyl palladium [Pd(η3-C3H5)(η5-C5H5)] and subsequent deposition on a Si(111) surface. Deposition occurs via an electron impact mechanism on either the tip or surface, depending on the bias polarity, and is observed with voltages of ≥2.75 V. This is close to the predicted condensed phase dissociation energy of 2.3 eV for Pd(η3-C3H5)(η5-C5H5)→Pd+C3H5+C5H5. Metallic deposits of nanometer dimensions can be written on the surface. Deposition onto an electrochemically etched tip results in a narrow conductive secondary tip which gives improved spatial resolution when imaging high-aspect ratio features on the surface.