Trap-limited hydrogen diffusion in boron-doped silicon

The hydrogen diffusion process in boron-doped silicon for temperatures T in the range from 60 ^∘{}C to 140 ^∘{}C is entirely trap limited and shows no dependence on the diffusivity of the free hydrogen. The effective hydrogen diffusion coefficient Deff is determined at two values of the boron concentration NA=1.4×{}10¹⁵ cm^-3 and NA=3.8×{}10¹⁶ cm^-3. The values of Deff satisfy the Arrhenius equation NA{D}eff=P0$exp(-${E}ₚ$/kT) with ${E}P$=1.28 eV and ${P}₀=1×{10}²⁰$ ${cm}^{{{-}}1}$ ${s}^{{{-}}1}$. We present a model which predicts that ${N}ADeff={ν}/(4{π}R), where {ν} is the dissociation frequency of the BH complex and R{}3.5 nm the collision radius which describes the trapping of H at the boron atom.