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A relatively simple and inexpensive inverse photoemission spectrometer (IPS) with high resolution and high efficiency has been set up. Using this IPS, the inverse photoemission spectrum of Si(100)2 × 1 surface has been obtained. The resolution of the spectrum is better than 0.5eV at 9.8eV photon energy with a counting rate about 10 3 /μA·S·sr.
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Jihuang Hu (1989) studied this question.
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