Experimental methods are presented for determining the thermal resistance of vertical-cavity surfaceemitting lasers (VCSELs) and the lateral electrical conductivity of their p-type semiconductor layers.A VCSEL structure was manufactured from III-As compounds on a gallium arsenide substrate.Conductivity was determined using transmission line measurement (TLM).Electrical and thermal parameters were determined for various ambient temperatures.The results could be used for computer analysis of VCSELs.
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Śpiewak et al. (2023) studied this question.
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