Low energy electron loss spectroscopy (EELS) is applied to the reaction of Ti deposited on a SiO2layer. Even at room temperature a reaction of Ti and SiO2 occurs. At elevated temperatures — well below silicide formation temperature — the loss spectrum can be explained by vibrations of Si–O–Si molecules with a bond angle about 20° smaller than in the original SiO2 layer.
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Butz et al. (1986) studied this question.
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