When the p-channel MOSFET is stressed near the maximum substrate current Isub, the lifetime t (5-percent increase in the transconductance) followstIsub = A(Isub/Id)⁻ⁿ, with n = 2.0. A simple electron trapping model is proposed to explain the observed power law relationship. The current ratioIsub/Idand the maximum channel electric field decrease with increasing stress time, which is consistent with electron trapping in the oxide during the stress.
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Tzou et al. (1986) studied this question.