The transverse magnetoresistance of ambipolar semiconducting plates is investigated under a wide range of magnetic fields. It is shown that sample geometry influence is less important than in extrinsic semiconductors. A simple theoretical analysis, with which experimental results are in very good agreement, enables one to estimate the geometry influence on the “Hall field” from magnetoresistance measurements only. Moreover an original method is proposed, basically different from usual ones, for the determination of carrier densities and mobilities. The method is applied to nearly intrinsic Ge and InSb at room temperature.
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Lakeou et al. (1977) studied this question.
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