Tunneling magnetoresistance (TMR) in Ga0.92Mn0.08As/Al–O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field |H|≤2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 μA. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented.
No takes yet. Share an insight, caveat, or question.
Du et al. (2009) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: