We report the observation of the spin valve effect in (Ga,Mn)As∕p-GaAs∕(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current-in-plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers are magnetized orthogonal to each other. Measurements carried out for different postgrowth annealing conditions and spacer layer thicknesses suggest that the positive magnetoresistance peaks originate in a noncollinear spin valve effect due to spin-dependent scattering that is believed to occur primarily at interfaces.
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Xiang et al. (2007) studied this question.
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