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May 19, 1997Applied Physics Letters

X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si1−xGex, Si1−yCy, and Si1−x−yGexCy on Si(001)

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MKMyeongcheol KimKorea Advanced Institute of Science and TechnologyHOH. J. OstenLeibniz University Hannover

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Kim et al. (1997) studied this question.

synapsesocial.com/papers/6aa04b09e47507b787628844https://doi.org/10.1063/1.118998
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  1. 1Heterojunction band lineups in Si-Ge alloys using spatially resolved electron-energy-loss spectroscopy1993 · 56 citations
  2. 2Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x-ray photoelectron spectroscopy1995 · 56 citations
  3. 3Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy1983 · 512 citations