Certain high-voltage pulsed-power switches based on semi-insulating GaAs or InP exhibit a ‘‘lock-on’’ effect. In this paper, this effect is argued to be fundamentally a transferred-electron effect, and its experimentally observed characteristics are explained. The lock-on effect causes high forward drop and high power dissipation for certain pulsed-power switches based on GaAs and various other direct-gap materials.
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Gundersen et al. (1992) studied this question.
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