We investigated the electronic and structural properties of graphene layers grown on a 6H-SiC (Si-terminated) substrate by using core level photoemission spectroscopy (CLPES), low energy electron diffraction (LEED), and near edge x-ray absorption fine structure (NEXAFS). The angle between the plane of the graphene sheet and the SiC substrate was measured by monitoring the variation of the π * transition in the NEXAFS spectrum with the thickness of the graphene layers. As the thickness of the graphene layers increased, the angle gradually decreased.
No takes yet. Share an insight, caveat, or question.
Kim et al. (2008) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: