Answers are grounded in this paper and cite their sources.
Charging and topography evolution simulations during plasma etching of dense line-and-space patterns reveal that multiple-feature effects influence critically the etch profile characteristics of the various lines. By including neighboring lines, the simulation predicts a peculiar notching behavior, where the extent of notching varies with the location of the line. Feature-scale modeling can no longer be focused on individual features alone; “adjacency” effects are crucial for understanding and predicting the outcome of etching experiments at reduced device dimensions.
No takes yet. Share an insight, caveat, or question.
Hwang et al. (1997) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: