A photoconductive-type SnO 2 -based photosensor was fabricated for monitoring UV-B rays that are harmful to human health. A SnO 2 film was grown by plasma-assisted molecular beam epitaxy and postannealed in air to increase the resistivity of the film for decreasing dark current. The film had an optical bandgap of 4.1 eV, which is suitable for sensing UV-B rays. The sensor exhibited a large photoresponsivity in the UV-B region. The external quantum efficiency at 290 nm was 10%. These results support the development of simple and low-cost UV-B sensors based on SnO 2 .
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Oshima et al. (2009) studied this question.
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