Thermal Diffusivity of Pure and Doped TGS Crystals

The thermal diffusivity of pure and doped TGS crystals is measured from 30 to 80 °C. The effect of heat treatment upon the thermal diffusivity of pure crystals examplifies the necessity of sample annealing before carrying out any measurements. The main features of the temperature dependence of thermal diffusivity, in both ferroelectric and paraelectric phases are discussed. It is found that the valency and ionic radii of the dopant have a considerable effect on the obtained results.