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Reducing-atmosphere treatment at 400°C for 10 min was performed on sol–gel-derived Pb(Zr,Ti)O3 (PZT) thin films, which were spin-coated on a LaNiO3/Pt/Ti/SiO2/Si substrate and annealed. The reducing atmosphere does not produce any significant change of the preferred orientation perovskite structure of these ferroelectric thin films. However, the relative dielectric constant and the remanent polarization of the PZT films decrease significantly with the reducing-atmosphere treatment. In addition, the endurance of electrical signal cycling is also decreased by the reducing atmosphere treatment. On the other hand, the leakage currents of the reducing-atmosphere-treated PZT films are decreased by about one order of magnitude.
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Chao et al. (2001) studied this question.
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