Growth and characterization of 144 μm thick barium ferrite single crystalline film for microwave device application

Liquid phase epitaxy technique was used to grow 144 μm thick barium ferrite (BaFe12O19; BaM) single crystalline films on (111) Gd3Ga5O12 substrate. The growth rate of 72 μm/h was achieved with a flux system of Fe2O3–BaCO3–Na2CO3. The grown BaM films show single crystalline (000l) orientation that was confirmed by x-ray diffraction and magnetic torque curves. The saturation magnetization (4πMs) and the anisotropy field (Hk) were found to be 4.2 kG and 16.0 kOe, respectively. The ferrimagnetic resonance linewidth (ΔH) at 35 GHz was measured to be 0.1 kOe.