Overlay is one of the key designed rules for producing VLSI devices. In order to have a better resolution and alignment accuracy in lithography process, it is important to model the overlay errors and then to compensate them into tolerances. This study aimed to develop a new model that bridges the gap between the existing theoretical models and the data obtained in real settings and to discuss the overlay sampling strategies with empirical data in a wafer fab. In addition, we used simulation to examine the relations between the various factors and the caused overlay errors. This paper concluded with discussions on further research.
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Chien et al. (2001) studied this question.
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