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November 24, 2014RSC Advances

Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO 2 /TiN structure

Dong-Hyeok Lim Gayeon Kim Jin Ho Song Kwangsik Jeong Dong-Chan Kim Seok-Woo Nam Mann–Ho Cho Tae Geol Lee

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Abstract

The field-enhanced effect due to the oxygen vacancy distribution improves the memory performance in the TiO 2 -based RRAM device.

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Cite This Study

Lim et al. (2014) studied this question.

synapsesocial.com/papers/6aa1279a25b16df109667904 https://doi.org/10.1039/c4ra09443c

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Resistive switching in transition metal oxidesReview · 2008 · 2,950 citations
2A Family of Electronically Reconfigurable NanodevicesOriginal Research · 2009 · 231 citations
3The mechanism of electroforming of metal oxide memristive switchesOriginal Research · 2009 · 860 citations
4Resistive Random Access Memory (ReRAM) Based on Metal OxidesReview · 2010 · 1,038 citations
5Metal–Oxide RRAMReview · 2012 · 2,752 citations

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