The effects of polygermanium interlayer, acting mainly as heating and thermal-resisting one, on performance of phase change memory are studied. Thermal simulation shows that the maximum temperature in Ge2Sb2Te5 layer is remarkably promoted when Ge2Sb2Te5 is capped between polygermanium layers. The maximum temperature location moves closer to the interface between Ge2Sb2Te5 and tungsten plug, significantly avoiding the parallel resistance in the reset state, which makes the memory more reliable. Electrical measurement shows that the polygermanium capped structure has a much lower reset current and larger resistance contrast compared to the one without polygermanium layers.
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Zhang et al. (2008) studied this question.
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