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An AlGaInP-GaInP strained-layer quantum well laser structure emitting at 670 nm is pumped by a 7–20 keV scanning electron beam. At room temperature, a threshold power density as low as 57 W/mm2 is obtained, which is only 3.8× the value for diode laser operation. More than 250 points are resolved on a 5 mm bar. They are scanned at a speed of 1000 m/s at an output level of 20 mW.
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Cornelissen et al. (1994) studied this question.
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