Magnetic order by C-ion implantation into Mn5Si3 and Mn5Ge3 and its lateral modification

Ferromagnetic Mn5Si3C0.8 and Mn5Ge3C0.8 films with Curie temperatures TC well above room temperature are obtained by C+12-ion implantation in antiferromagnetic Mn5Si3 or ferromagnetic Mn5Ge3. Patterning of the films with a gold mesh serving as a stencil mask during implantation allows a lateral modification of magnetic order creating ferromagnetic regions of Mn5Si3C0.8 which are embedded in antiferromagnetic Mn5Si3. This provides a procedure for the fabrication of magnetoelectronic hybrid devices comprised of different magnetic phases.