We have characterized the structural and magnetic properties of low-temperature molecular-beam epitaxy grown Ge:Mn by means of high-resolution transmission electron microscopy (HR-TEM), energy dispersive x-ray spectroscopy, and superconducting quantum interference device (SQUID) magnetometry. We find a coherent incorporation of Mn5Ge3 clusters in an epitaxially grown Ge:Mn matrix, which shows the characteristics of a diluted magnetic semiconductor phase of Mn-doped Ge. The clusters are preferentially oriented with the hexagonal [0001] direction parallel to the [001] growth direction of the Ge:Mn matrix, as determined from both HR-TEM and SQUID measurements.
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Bihler et al. (2006) studied this question.
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