A two-level device model for a gate turn-off thyristor (GTO) is presented to predict its transient behaviour especially for turn-off. The model is developed mainly on the basis or the semiconducting phenomenon and is represented in a subcircuit form for easy adaption to currently used circuit simulators. The level 1 model is formed by a switching network paralleled with a recovery circuit and is able to simulate the GTO switching with short simulation time but acceptable accuracy. The level 2 model incorporates the Hu-Ki SCR model and additional charge control, anode-cathode and gate-cathode resistance modulation networks to simulate turn-off phenomena more precisely. The validity of the model is verified by comparing with experimental results. Methods for determination of the model parameters are described.
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Liang et al. (1991) studied this question.
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