Dislocation configurations characteristic of deformed czochralski-grown silicon crystals

The dislocation configurations developed during high-temperature tensile deformation in Czochralski silicon crystals containing 1 × 1018 cm−3 of oxygen are investigated in detail by means of transmission electron microscopy. Remarkable similarity is observed in the dislocation configurations and also in the work-hardening process between silicon crystals and f.c.c. metals. It is also found that the dislocation density on the primary slip plane increases linearly with the flow stress in stage II. Since weak-beam electron microscopy reveals no oxide precipitates, it is suggested that high mechanical strength of Czochralski crystals is related to the formation of a Cottrell atmosphere around dislocations.