Internal transitions of confined magnetoexcitons in GaAs-(Ga,Al)As quantum wells

Internal transitions of confined magnetoexcitons in GaAs-(Ga,Al)As quantum wells have been theoretically studied under magnetic fields applied along the growth direction. Results are obtained within the effective-mass approximation and by using a variational procedure. Calculations are performed for transitions from $1s$-like to 2p-, 3p-, and $4p$-like magnetoexciton states as functions of the applied magnetic field, and for several well widths. Theoretical results for the far-infrared intraexcitonic transition energies are then compared with recent experimental measurements using optically detected resonance techniques.