Insight into the output characteristics of III-V tunneling field effect transistors

Bijesh Rajamohanan; D. K. Mohata; Ashkar Ali; Suman Datta

doi:10.1063/1.4794536

March 4, 2013Applied Physics Letters

Insight into the output characteristics of III-V tunneling field effect transistors

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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Bijesh Rajamohanan, Dheeraj Mohata, Ashkar Ali, Suman Datta; Insight into the output characteristics of III-V tunneling field effect transistors. Appl. Phys. Lett. 4 March 2013; 102 (9): 092105. https://doi.org/10.1063/1.4794536 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

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Rajamohanan et al. (2013) studied this question.

synapsesocial.com/papers/6aa1439c112163f8d93c75b9 https://doi.org/10.1063/1.4794536

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Insight into the output characteristics of III-V tunneling field effect transistors

Abstract

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Insight into the output characteristics of III-V tunneling field effect transistors

Abstract

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Cite This Study

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