A two‐valence band model with a single‐and six‐valley structure is developed for the interpretation of galvanomagnetic effects in p‐type mixed crystals of the system (BixSb1−x)2Te3(0 ≦ x ≦ 1), especially for x = 0 under the assumption of a purely anisotropic scattering in each band, neglecting interband and intervalley scattering. This model, refering to results from Shubnikov‐de Haas investigations on Sb2Te3 at 4 K, is tested with galvanomagnetic data of undoped Sb2Te3 in the temperature region 100 K ≦ T ≦ 360 K. It is, however, not possible to fit such a two‐valence band model to these data sufficiently well due, possibly, of a more complicated scattering process of charge carriers.
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Simon et al. (1981) studied this question.
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