With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPNs have been optimized for operation in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the epi. A low-stress silicon rich nitride layer is proven effective as surface isolation before contact window dip-etch.
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Nanver et al. (1996) studied this question.
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