Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures

Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacitance–voltage measurements on metal-oxide-semiconductor (MOS)-gated enhancement mode structures have been used to deduce Hall scattering factors, rH, in the Si1−xGex two-dimensional hole gas. At 300 K, rH was found to be equal to 0.4 for x=0.2 and x=0.3. Knowing rH, it is possible to calculate the 300 K drift mobilities in the modulation-doped structures which are found to be 400 cm2 V−1 s−1 at a carrier density of 3.3×1011 cm−2 for x=0.2 and 300 cm2 V−1 s−1 at 6.3×1011 cm−2 for x=0.3, factors of between 1.5 and 2.0 greater than a Si pMOS control.