The effects of water vapor on the crystallization behavior of sol‐gel‐derived titanium dioxide (TiO 2 ) thin films that contained 0‐50 mol% silica (SiO 2 ) were investigated. Anatase formed on exposure to water vapor at 60°‐180°C, with a simultaneous decrease in the concentration of OH groups. An increase in the SiO 2 content of the exposed films led to an increase in the average crystalline size. Because crystallization of the exposed films of the films was not accompanied by shrinkage, porous anatase coatings were obtained via exposure at a relatively low temperature. Phase separation of the immiscible TiO 2 ‐SiO 2 system was induced with water vapor, which resulted in acceleration of the crystallization of the sol‐gel films.
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Imai et al. (1999) studied this question.
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